BFR181T/BFR181TW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 2, 20-Jan-99 1 (4)
Document Number 85024
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA.
Features
C0068 Low noise figure
C0068 High power gain
13 581
23
1
94 9280
BFR181T Marking: RF
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
1
3
13 652 13 570
BFR181TW Marking: WRF
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
CBO
15 V
Collector-emitter voltage V
CEO
10 V
Emitter-base voltage V
EBO
2 V
Collector current I
C
20 mA
Base current I
B
2 mA
Total power dissipation T
amb
≤ 78 C0176C P
tot
160 mW
Junction temperature T
j
150 C0176C
Storage temperature range T
stg
–65 to +150 C0176C
Maximum Thermal Resistance
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35C0109m Cu
R
thJA
450 K/W