BFR180W
Jun-13-20011
NPN Silicon RF Transistor
G01 For low-power amplifiers in mobile
communication systems (pager) at collector
currents from 0.2 mA to 2.5 mA
G01 f
T
= 7 GHz
F = 2.1 dB at 900 MHz
1
3
VSO05561
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR180W RDs 1 = B 2 = E 3 = C SOT323
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
8 V
Collector-emitter voltage V
CES
10
Collector-base voltage V
CBO
10
Emitter-base voltage V
EBO
2
Collector current I
C
4 mA
Base current I
B
0.5
Total power dissipation, T
S
G01 126 °C
1)
P
tot
30 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 790
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance