Semiconductor Group 1 Feb-04-1997
BFR 180
NPN Silicon RF Transistor
• For low-power amplifiers in mobile
communication systems (pager) at collector
currents from 0.2mA to 2.5mA
• f
T
= 7GHz
F = 2.1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFR 180 RDs Q62702-F1296 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
8 V
Collector-emitter voltage V
CES
10
Collector-base voltage V
CBO
10
Emitter-base voltage V
EBO
2
Collector current I
C
4 mA
Base current I
B
0.5
Total power dissipation
T
S
≤ 127 °C
P
tot
30
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 780 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.