BFR106
Jun-27-20011
NPN Silicon RF Transistor
G01 For low noise, high-gain amplifiers
G01 For linear broadband amplifiers
G01 Special application: antenna amplifiers
G01 Complementary type: BFR194 (PNP)
1
2
3
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR106 R7s 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
15 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
3
Collector current I
C
100 mA
Base current I
B
12
Total power dissipation, T
S
G01 73 °C
1)
P
tot
700 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 110
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance