PNP Silicon RF Transistor BFQ 76
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type Marking Package
1)
Pin Configuration
BFQ 76 Q62702-F80476 Cerec-X
1 2 3 4
B E C E
Ordering Code
(tape and reel)
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 15 V
Emitter-base voltage VEB0 2
Collector current IC 30 mA
Collector-base voltage VCB0 20
Junction temperature Tj 175 ˚C
Ambient temperature range TA – 65 … + 175
Total power dissipation, TS £ 116 ˚C
3)
Ptot 250 mW
Storage temperature range Tstg – 65 … + 175
Thermal Resistance
Junction - ambient
2)
Rth JA £ 315 K/W
Junction - soldering point
3)
Rth JS £ 235
1)
For detailed dimensions see chapter Package Outlines.
2)
Package mounted on alumina 15 mm · 16.7 mm · 0.7 mm.
3)
TS is measured on the collector lead at the soldering point to the pcb.
l For broadband amplifiers up to 2 GHz
at collector currents up to 20 mA.
l Complementary type: BFQ 71 (NPN).