BFQ81
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99 1 (10)
Document Number 85023
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to 2 GHz, especially for mobile telephone.
Features
C0068 Small feedback capacitance
C0068 Low noise figure
C0068 Low cross modulation
23
1
94 9280
BFQ81 Marking: RA
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581–2
Absolute Maximum Ratings
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
CBO
25 V
Collector-emitter voltage V
CEO
16 V
Emitter-base voltage V
EBO
2 V
Collector current I
C
30 mA
Total power dissipation T
amb
≤ 60 C0176C P
tot
200 mW
Junction temperature T
j
150 C0176C
Storage temperature range T
stg
–65 to +150 C0176C
Maximum Thermal Resistance
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35C0109m Cu
R
thJA
450 K/W