NPN Silicon RF Transistor BFQ 74
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type Marking Package
1)
Pin Configuration
BFQ 74 Q62702-F78874 Cerec-X
1 2 3 4
B E C E
Ordering Code
(tape and reel)
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 16 V
Emitter-base voltage VEB0 2
Collector current IC 35 mA
Collector-base voltage VCB0 25
Base current IB 5
Junction temperature Tj 175 ˚C
Ambient temperature range TA – 65 … + 175
Total power dissipation, TS £ 115 ˚C
3)
Ptot 300 mW
Storage temperature range Tstg – 65 … + 175
Thermal Resistance
Junction - ambient
2)
Rth JA £ 280 K/W
Junction - soldering point
3)
Rth JS £ 200
Collector-emitter voltage, VBE = 0 VCES 25
Peak collector current, f ‡ 10 MHz ICM 45
1)
For detailed dimensions see chapter Package Outlines.
2)
Package mounted on alumina 15 mm · 16.7 mm · 0.7 mm.
3)
TS is measured on the collector lead at the soldering point to the pcb.
l For low-noise amplifiers in the GHz range,
and broadband analog and digital applications
in telecommunications systems at collector
currents from 1 mA to 25 mA.
l Hermetically sealed ceramic package.
l HiRel/Mil screening available.