BFQ19S
Jun-22-20011
NPN Silicon RF Transistor
G01 For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
2
1
3
VPS05162
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFQ19S FG 1 = B 2 = C 3 = E SOT89
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CEO
15 V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
3
Collector current
I
C
75 mA
Base current
I
B
10
Total power dissipation
T
S
G01 85 °C
1)
P
tot
1 W
Junction temperature
T
j
150 °C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 65
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance