Semiconductor Group 1 Dec-13-1996
BFQ 193
NPN Silicon RF Transistor
• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
• f
T
= 7.5 GHz
F = 1.3 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFQ 193 RCs Q62702-F1312 1 = B 2 = C 3 = E SOT-89
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
12 V
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2
Collector current I
C
80 mA
Base current I
B
10
Total power dissipation
T
S
≤ 93 °C
P
tot
600
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 95 K/W