BFP640F
Mar-11-2004
1
NPN Silicon Germanium RF Transistor*
• High gain low noise RF transistor
• Provides outstanding performance
for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.65 dB at 1.8 GHz
Outstanding noise figure F = 1.2 dB at 6 GHz
• High maximum stable gain
G
ms
= 23 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz f
T
-Silicon Germanium technology
*Short-term description
TSFP-4
1
2
4
3
XYs
G41 G43 G73
G31 G32
G33G34
G64 G69 G72 G65 G63 G74 G69 G6F G6E G20 G6F G66 G20 G75 G6E G72 G65 G65 G6C G69 G6E G67
G74 G6F G70 G20 G76 G69 G65 G77
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP640F R4s
1=B 2=E 3=C 4=E - - TSFP-4
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
T
A
> 0°C
T
A
≤ 0°C
V
CEO

4
3.7
V
Collector-emitter voltage V
CES
13
Collector-base voltage V
CBO
13
Emitter-base voltage V
EBO
1.2
Collector current I
C
50 mA
Base current I
B
3
Total power dissipation
1)

T
S
≤ 92°C
P
tot
200 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
1
T
S
is measured on the collector lead at the soldering point to the pcb