BFP640
Apr-21-2004
1
NPN Silicon Germanium RF Transistor
• High gain low noise RF transistor
• Provides outstanding performance
for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.65 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
• High maximum stable gain
G
ms
= 24 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz f
T
-Silicon Germanium technology
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP640 R4s
1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
T
A
> 0 °C
T
A
≤ 0 °C
V
CEO

4
3.7
V
Collector-emitter voltage V
CES
13
Collector-base voltage V
CBO
13
Emitter-base voltage V
EBO
1.2
Collector current I
C
50 mA
Base current I
B
3
Total power dissipation
1)

T
S
≤ 90°C
P
tot
200 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
1
T
S
is measured on the collector lead at the soldering point to the pcb