BFP620F
Apr-21-2004
1
NPN Silicon Germanium RF Transistor*
• High gain low noise RF transistor
• Small package 1.4 x 0.8 x 0.59 mm
• Outstanding noise figure F = 0.7 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
G
ms
= 21 dB at 1.8 GHz
G
ma
= 10 dB at 6 GHz
• Gold metallization for extra high reliability
*Short-term description
TSFP-4
1
2
4
3
XYs
1
34
2
Direction of Unreeling
Top View
XYs
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP620F R2s
1=B 2=E 3=C 4=E - - TSFP-4
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
T
A
> 0 °C
T
A
≤ 0 °C
V
CEO

2.3
2.1
V
Collector-emitter voltage V
CES
7.5
Collector-base voltage V
CBO
7.5
Emitter-base voltage V
EBO
1.2
Collector current I
C
80 mA
Base current I
B
3
Total power dissipation
1)

T
S
≤ 96°C
P
tot
185 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
1
T
S
is measured on the collector lead at the soldering point to the pcb