BFP540F
Jan-28-2004
1
NPN Silicon RF Transistor
• For highest gain low noise amplifier
at 1.8 GHz
• Outstanding G
ms
= 20 dB
Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET


45 - Line
TSFP-4
1
2
4
3
XYs
G41 G54 G73
G31 G32
G33G34
G64 G69 G72 G65 G63 G74 G69 G6F G6E G20 G6F G66 G20 G75 G6E G72 G65 G65 G6C G69 G6E G67
G74 G6F G70 G20 G76 G69 G65 G77
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP540F ATs*
1=B 2=E 3=C 4=E - - TSFP-4
* Pin configuration fixed relative to marking (see package picture)
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
4.5 V
Collector-emitter voltage V
CES
14
Collector-base voltage V
CBO
14
Emitter-base voltage V
EBO
1
Collector current I
C
80 mA
Base current I
B
8
Total power dissipation
1)
T
S
≤ 80°C P
tot
250 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
2)
R
thJS
≤ 280
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance