BFP 490
Semiconductor Group
Sep-09-19981
SIEGET

25
NPN Silicon RF Transistor
Preliminary data
• For high power amplifiers
• Compression point P
-1dB
= 26.5 dBm at 1.8 GHz
maxim. available Gain G
ma
= 9.5 dB at 1.8 GHz
• Transition frequency f
T
> 17 GHz
• Gold metalization for high reliability
• SIEGET

25 - Line
Siemens Grounded Emitter Transistor
25 GHz f
T
- Line
VPW05980
1
2
3
5
4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFP 490 AOs Q62702-F1721 1 = B 2 = E 3 = C 4 = C SCT-5955 = E
Maximum Ratings
Parameter Symbol UnitValue
VCollector-emitter voltage 4.5
V
CEO
Collector-base voltage
V
CBO
15
Emitter-base voltage
V
EBO
1.5
Collector current
I
C
600 mA
Base current
I
B
60
Total power dissipation, T
S
£ 85 °C P
tot
1000 mW
Junction temperature
T
j
150 °C
Ambient temperature
T
A
-65 ...+150
Storage temperature
T
stg
-65 ...+150
Thermal Resistance
Junction - soldering point
1)
R
thJS
£ 65
K/W
1) TS is measured on the emitter lead at the soldering point
mounted on alumina 15 mm x 16,7 mm x 0.7 mm
Semiconductor Group 1 1998-11-01