BFP460
Jun-14-2004
1
NPN Silicon RF Transistor*
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• Excellent ESD performance
• High f
T
of 22 GHz
* Short-term description
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP460 ABs
1 = E 2 = C 3 = E 4=B - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
T
A
> 0 °C
T
A
≤ 0 °C
V
CEO

4.5
4.2
V
Collector-emitter voltage V
CES
15
Collector-base voltage V
CBO
15
Emitter-base voltage V
EBO
1.5
Collector current I
C
50 mA
Base current I
B
5
Total power dissipation
1)2)

T
S
≤ 100°C
P
tot
200 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
3)
R
thJS
≤ 250
K/W
1
P
tot
due to Maximum Ratings
2
T
S
is measured on the collector lead at the soldering point to the pcb
3
For calculation of R
thJA
please refer to Application Note Thermal Resistance