BFP 520
Semiconductor Group
Sep-09-19981
SIEGET

45
NPN Silicon RF Transistor
Preliminary data
• For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
Outstanding G
a
= 20 dB
Noise Figure F = 0.95 dB
• For oscillators up to 15 GHz
• Transition frequency f
T
= 45 GHz
• Gold metalization for high reliability
• SIEGET

45 - Line
Siemens Grounded Emitter Transistor
45 GHz f
T
- Line
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFP 520 APs Q62702-F1794 1 = B 2 = E 3 = C 4 = E SOT-343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CEO
2.5 V
Collector-base voltage
V
CBO
12 V
Emitter-base voltage
V
EBO
1 V
Collector current
I
C
40 mA
Base current
I
B
4 mA
Total power dissipation, T
S
£ 105 °C P
tot
100 mW
Junction temperature
T
j
150 °C
Ambient temperature
T
A
-65 ...+150 °C
Storage temperature
T
stg
-65 ...+150 °C
Thermal Resistance
Junction - soldering point
1)
R
thJS
£ 450
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
Semiconductor Group 1 1998-11-01