SIEGET
G01
25
BFP420F
Dec-07-20011
NPN Silicon RF Transistor
Preliminary data
G01 For high gain low noise amplifiers
G01 Smallest Package 1.4 x 0.8 x 0.59mm
G01 Noise figure F = 1.1 dB at 1.8 GHz
outstanding G
ma
= 20 dB at 1.8 GHz
G01 Transition frequency f
T
= 25 GHz
G01 Gold metallization for high reliability
G01 SIEGET
G02
25 GHz f
T
- Line
TSFP-4
1
2
4
3
XYs
G41G4DG73
G31 G32
G33G34
G64G69G72G65G63G74G69G6FG6EG20G6FG66G20G75G6EG72G65G65G6CG69G6EG67
G74G6FG70G20G76G69G65G77
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP420F AMs 1 = B 2 = E 3 = C 4 = E
TSFP-4
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
4.5 V
Collector-base voltage V
CBO
15
Emitter-base voltage V
EBO
1.5
Collector current I
C
35 mA
Base current I
B
3
Total power dissipation
T
S
G01 111°C
1)
P
tot
160 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 240
K/W
1
T
S
is measured on the emitter lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance