BFP450SIEGET
G01
25
Aug-20-20011
NPN Silicon RF Transistor
G01 For medium power amplifiers
G01 Compression point P
-1dB
= +19 dBm at 1.8 GHz
maximum available gain G
ma
= 15.5 dB at 1.8 GHz
Noise figure F = 1.25 dB at 1.8 GHz
G01 Transition frequency f
T
= 24 GHz
G01 Gold metallization for high reliability
G01 SIEGET
G02
25 GHz f
T
- Line
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP450 ANs 1 = B 2 = E 3 = C 4 = E
SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
4.5 V
Collector-base voltage V
CBO
15
Emitter-base voltage V
EBO
1.5
Collector current I
C
100 mA
Base current I
B
10
Total power dissipation
T
S
G01G0296 °C
1)
P
tot
450 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 120
K/W
1
T
S
is measured on the emitter lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance