BFP 450
Semiconductor Group
Sep-09-19981
SIEGET

25
NPN Silicon RF Transistor
• For medium power amplifiers
• Compression point P
-1dB
= +19 dBm at 1.8 GHz
maximum available gain G
ma
= 14 dB at 1.8 GHz
Noise figure F = 1.25 dB at 1.8 GHz
• Transition frequency f
T
= 24 GHz
• Gold metalization for high reliability
• SIEGET

25 - Line
Siemens Grounded Emitter Transistor
25 GHz f
T
- Line
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFP 450 ANs Q62702-F1590 1 = B 2 = E 3 = C 4 = E SOT-343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CEO
V4.5
V
CBO
15Collector-base voltage
V
EBO
Emitter-base voltage 1.5
Collector current 100 mA
I
C
I
B
10Base current
mW450
Total power dissipation, T
S
£ 96 °C P
tot
Junction temperature
T
j
150 °C
T
A
-65 ...+150Ambient temperature
Storage temperature
T
stg
-65 ...+150
Thermal Resistance
Junction - soldering point
1)
R
thJS
£ 130
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
Semiconductor Group 1 1998-11-01