BFP196W
Jun-22-20011
NPN Silicon RF Transistor
G01 For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 89 mA
G01 Power amplifier for DECT and PCN systems
G01 f
T
= 7.5 GHz
F = 1.5 dB at 900 MHz
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP196W RIs 1 = E 2 = C 3 = E 4 = B
SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CEO
12 V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
100 mA
Base current
I
B
12
Total power dissipation
T
S
G01 69 °C
1)
P
tot
700 mW
Junction temperature
T
j
150 °C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 115
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance