BFP182
Aug-09-20011
NPN Silicon RF Transistor
G01 For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
G01 f
T
= 8 GHz
F = 1.2 dB at 900 MHz
VPS05178
2
1
3
4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP182 RGs 1 = C 2 = E 3 = B 4 = E
SOT143
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CEO
12 V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
35 mA
Base current
I
B
4
Total power dissipation
T
S
G01 69 °C
1)
P
tot
250 mW
Junction temperature
T
j
150 °C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 325
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance