BFP181R
Jun-21-20011
NPN Silicon RF Transistor
G01 For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
G01 f
T
= 8 GHz
F = 1.45 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP181R RFs 1 = E 2 = C 3 = E 4 = B
SOT143R
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CEO
12 V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
20 mA
Base current
I
B
2
Total power dissipation
T
S
G01 75 °C
1)
P
tot
175 mW
Junction temperature
T
j
150 °C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 430
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance