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BFN36

器件描述:NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:127.29KB,共4页
Sponsor by e络盟
器件资料摘要:
Semiconductor Group 1
NPN Silicon High-Voltage Transistors BFN 36
BFN 38
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BFN 36
BFN 38
Q62702-F1246
Q62702-F1303
BFN 36
BFN 38
SOT-223
1 2 3 4
B C E C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
Parameter Symbol
BFN 36
Unit
Collector-emitter voltage VCE0 250 V
Collector-base voltage VCB0 250
Emitter-base voltage VEB0
Collector current IC mA
Base current IB
Total power dissipation, TS = 124 ˚C Ptot W
Junction temperature Tj ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 72 K/W
Peak collector current ICM
Peak base current IBM
BFN 38
300
300
200
100
1.5
150
500
200
Values
5
Junction - soldering point Rth JS ≤ 17
a71 Suitable for video output stages in TV sets
and switching power supplies
a71 High breakdown voltage
a71 Low collector-emitter saturation voltage
a71 Complementary types: BFN 37, BFN 39 (PNP)
5.91