BFN36, BFN38
Nov-30-20011
NPN Silicon High-Voltage Transistors
G01 Suitabled for video output stages in TV sets and
switching power supplies
G01 High breakdown voltage
G01 Low collector-emitter saturation voltage
G01 Complementary types: BFN37, BFN39 (PNP)
VPS05163
1
2
3
4
Type Marking Pin Configuration Package
BFN36
BFN38
BFN 36
BFN 38
1 = B
1 = B
2 = C
2 = C
3 = E
3 = E
4 = C
4 = C
SOT223
SOT223
Maximum Ratings
Parameter Symbol
BFN36 BFN38
Unit
Collector-emitter voltage V
CEO
250 300 V
Collector-base voltage V
CBO
250 300
Emitter-base voltage V
EBO
5 5
DC collector current I
C
200 mA
Peak collector current I
CM
500
Base current I
B
100
Peak base current I
BM
200
Total power dissipation, T
S
= 124 °C P
tot
1.5 W
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G0117 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance