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器件描述:NPN Silicon High-Voltage Transistors
器件厂商:INFINEON [Infineon Technologies AG]
厂商主页:http://www.infineon.com/
文件大小:45.87KB
文件页数:5
PDF阅读:BFN36.pdf (点击阅读器件资料)
摘要:
BFN36, BFN38 Nov-30-20011 NPN Silicon High-Voltage Transistors G01 Suitabled for video output stages in TV sets and switching power supplies G01 High breakdown voltage G01 Low collector-emitter saturation voltage G01 Complementary types: BFN37, BFN39 (PNP) VPS05163 1 2 3 4 Type Marking Pin Configuration Package BFN36 BFN38 BFN 36 BFN 38 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E 4 = C 4 = C SOT223 SOT223 Maximum Ratings Parameter Symbol BFN36 BFN38 Unit Collector-emitter voltage V CEO 250 300 V Collector-base voltage V CBO 250 300 Emitter-base voltage V EBO 5 5 DC collector current I C 200 mA Peak collector current I CM 500 Base current I B 100 Peak base current I BM 200 Total power dissipation, T S = 124 °C P tot 1.5 W Junction temperature T j 150 °C Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS G0117 K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance
相关器件:BFN38
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