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器件描述:PNP Silicon High-Voltage Transistors
器件厂商:INFINEON [Infineon Technologies AG]
厂商主页:http://www.infineon.com/
文件大小:48.16KB
文件页数:5
PDF阅读:BFN27.pdf (点击阅读器件资料)
摘要:
BFN25, BFN27 Nov-30-20011 PNP Silicon High-Voltage Transistors G01 Suitable for video output stages in TV sets and switching power supplies G01 High breakdown voltage G01 Low collector-emitter saturation voltage G01 Complementary types: BFN24, BFN26 (NPN) 1 2 3 VPS05161 Type Marking Pin Configuration Package BFN25 BFN27 FKs FLs 1 = B 1 = B 2 = E 2 = E 3 = C 3 = C SOT23 SOT23 Maximum Ratings Parameter Symbol BFN25 BFN27 Unit Collector-emitter voltage V CEO 250 300 V Collector-base voltage V CBO 250 300 Emitter-base voltage V EBO 5 5 DC collector current I C 200 mA Peak collector current I CM 500 Base current I B 100 Peak base current I BM 200 Total power dissipation, T S = 74 °C P tot 360 mW Junction temperature T j 150 °C Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS G01210 K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance
相关器件:BFN25
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