1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
12 01.11.2003
BFN 23 High Voltage Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25g47C) Grenzwerte (T
A
= 25g47C)
BFN 23
Collector-Emitter-voltage B open - V
CE0
250 V
Collector-Base-voltage E open - V
CB0
250 V
Collector-Emitter-voltage R
BE
= 2.7 kg83 - V
CER
250 V
Emitter-Base-voltage C open - V
EB0
5 V
Power dissipation – Verlustleistung P
tot
250 mW
1
)
Collector current – Kollektorstrom (dc) - I
C
50 mA
Peak Collector current – Kollektor-Spitzenstrom - I
CM
100 mA
Junction temperature – Sperrschichttemperatur T
j
150g47C
Storage temperature – Lagerungstemperatur T
S
- 65…+ 150g47C
Characteristics (T
j
= 25g47C) Kennwerte (T
j
= 25g47C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, - V
CB
= 200 V - I
CB0
– – 100 nA
I
E
= 0, - V
CB
= 200 V, T
j
= 150g47C- I
CB0
– – 20 g58A
Collector-Base cutoff current – Kollektorreststrom
- V
CB
= 250 V, R
BE
= 2.7 kg83 - I
CBR
––1 g58A
- V
CB
= 250 V, R
BE
= 2.7 kg83, T
j
= 150g47C- I
CBR
– – 50 g58A
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, - V
EB
= 5 V - I
EB0
– – 10 g58A