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器件描述:Surface mount Si-Epitaxial PlanarTransistors
器件厂商:DIOTEC [Diotec Semiconductor]
厂商主页:http://www.diotec.com/
文件大小:161.29KB
文件页数:2
PDF阅读:BFN23.pdf (点击阅读器件资料)
摘要:
1 ) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm 2 Kupferbelag (L?tpad) an jedem Anschlu? 12 01.11.2003 BFN 23 High Voltage Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberfl?chenmontage PNP Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgeh?use (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Geh?usematerial UL94V-0 klassifiziert Dimensions / Ma?e in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25g47C) Grenzwerte (T A = 25g47C) BFN 23 Collector-Emitter-voltage B open - V CE0 250 V Collector-Base-voltage E open - V CB0 250 V Collector-Emitter-voltage R BE = 2.7 kg83 - V CER 250 V Emitter-Base-voltage C open - V EB0 5 V Power dissipation – Verlustleistung P tot 250 mW 1 ) Collector current – Kollektorstrom (dc) - I C 50 mA Peak Collector current – Kollektor-Spitzenstrom - I CM 100 mA Junction temperature – Sperrschichttemperatur T j 150g47C Storage temperature – Lagerungstemperatur T S - 65…+ 150g47C Characteristics (T j = 25g47C) Kennwerte (T j = 25g47C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom I E = 0, - V CB = 200 V - I CB0 – – 100 nA I E = 0, - V CB = 200 V, T j = 150g47C- I CB0 – – 20 g58A Collector-Base cutoff current – Kollektorreststrom - V CB = 250 V, R BE = 2.7 kg83 - I CBR ––1 g58A - V CB = 250 V, R BE = 2.7 kg83, T j = 150g47C- I CBR – – 50 g58A Emitter-Base cutoff current – Emitterreststrom I C = 0, - V EB = 5 V - I EB0 – – 10 g58A
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