Semiconductor Group 1
NPN Silicon High-Voltage Transistor BFN 22
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BFN 22 Q62702-F1024HBs SOT-23B E C
1 2 3
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 250 V
Collector-base voltage VCB0 250
Collector-emitter voltage, RBE = 2.7 kΩ VCER 250
Collector current IC 50 mA
Total power dissipation, TS =71˚C Ptot 360 mW
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 290 K/W
Junction - soldering point Rth JS ≤ 220
Emitter-base voltage VEB0 5
Peak collector current ICM 100
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
a71 Suitable for video output stages in TV sets
and switching power supplies
a71 High breakdown voltage
a71 Low collector-emitter saturation voltage
a71 Low capacitance
a71 Complementary type: BFN 23 (PNP)
5.91