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器件描述:PNP Silicon High-Voltage Transistors
器件厂商:INFINEON [Infineon Technologies AG]
厂商主页:http://www.infineon.com/
文件大小:47.96KB
文件页数:5
PDF阅读:BFN17.pdf (点击阅读器件资料)
摘要:
BFN17, BFN19 Nov-30-20011 PNP Silicon High-Voltage Transistors G01 Suitable for video output stages in TV sets and switching power supplies G01 High breakdown voltage G01 Low collector-emitter saturation voltage G01 Complementary types: BFN16, BFN18 (NPN) 2 1 3 VPS05162 2 Type Marking Pin Configuration Package BFN17 BFN19 DG DH 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E SOT89 SOT89 Maximum Ratings Parameter Symbol BFN17 BFN19 Unit Collector-emitter voltage V CEO 250 300 V Collector-base voltage V CBO 250 300 Emitter-base voltage V EBO 5 5 DC collector current I C 200 mA 500I CM Peak collector current Base current I B 100 I BM 200Peak base current WP tot Total power dissipation, T S = 130 °C 1 Junction temperature 150 °CT j T stg -65 ... 150Storage temperature Thermal Resistance Junction - soldering point 1) R thJS G0120 K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance
相关器件:BFN19
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