BFN17, BFN19
Nov-30-20011
PNP Silicon High-Voltage Transistors
G01 Suitable for video output stages in TV sets and
switching power supplies
G01 High breakdown voltage
G01 Low collector-emitter saturation voltage
G01 Complementary types: BFN16, BFN18 (NPN)
2
1
3
VPS05162
2
Type Marking Pin Configuration Package
BFN17
BFN19
DG
DH
1 = B
1 = B
2 = C
2 = C
3 = E
3 = E
SOT89
SOT89
Maximum Ratings
Parameter Symbol
BFN17 BFN19
Unit
Collector-emitter voltage V
CEO
250 300 V
Collector-base voltage V
CBO
250 300
Emitter-base voltage V
EBO
5 5
DC collector current I
C
200 mA
500I
CM
Peak collector current
Base current I
B
100
I
BM
200Peak base current
WP
tot
Total power dissipation, T
S
= 130 °C 1
Junction temperature 150 °CT
j
T
stg
-65 ... 150Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS
G0120 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance