EEWorld咨询电话:82357002,82350740-8068 邮件咨询:datasheet@eeworld.com.cn
器件描述:NPN Silicon High-Voltage Transistors
器件厂商:INFINEON [Infineon Technologies AG]
厂商主页:http://www.infineon.com/
文件大小:47.8KB
文件页数:5
PDF阅读:BFN16.pdf (点击阅读器件资料)
摘要:
BFN16, BFN18 Nov-30-20011 NPN Silicon High-Voltage Transistors G01 Suitable for video output stages in TV sets and switching power supplies G01 High breakdown voltage G01 Low collector-emitter saturation voltage G01 Complementary types: BFN17, BFN19 (PNP) 2 1 3 VPS05162 2 Type Marking Pin Configuration Package BFN16 BFN18 DD DE 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E SOT89 SOT89 Maximum Ratings Parameter Symbol BFN16 BFN18 Unit Collector-emitter voltage V CEO 250 300 V Collector-base voltage V CBO 250 300 Emitter-base voltage V EBO 5 5 DC collector current I C 200 mA I CM 500Peak collector current 100I B Base current Peak base current 200I BM P tot 1Total power dissipation, T S = 130 °C W °CJunction temperature T j 150 Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS G0120 K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance
相关器件:BFN18
|