Semiconductor Group 1 Dec-13-1996
BFG 235
NPN Silicon RF Transistor
• For low-distortion broadband output amplifier
stages in antenna and telecommunications
systems up to 2 GHz at collector currents from
120mA to 250mA
• Power amplifiers for DECT and PCN systems
• Integrated emitter ballast resistor
• f
T
= 5.5 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFG 235 BFG235 Q62702-F1432 1 = E 2 = B 3 = E 4 = C SOT-223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
15 V
Collector-emitter voltage V
CES
25
Collector-base voltage V
CBO
25
Emitter-base voltage V
EBO
2
Collector current I
C
300 mA
Base current I
B
40
Total power dissipation
T
S
≤ 80 °C
P
tot
2000
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 35 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.