BFG 235
Oct-27-19991
NPN Silicon RF Transistor
G01 For low-distortion broadband output amplifier
stages in antenna and telecommunication
systems up to 2 GHz at collector currents from
120 mA to 250 mA
G01 Power amplifiers for DECT and PCN systems
G01 Integrated emitter ballast resistor
G01 f
T
= 5.5 GHz
VPS05163
1
2
3
4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFG 235 BFG235 1 = E 2 = B 3 = E 4 = C SOT-223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
15 V
Collector-emitter voltage V
CES
25
Collector-base voltage V
CBO
25
Emitter-base voltage V
EBO
2
Collector current I
C
300 mA
Base current I
B
40
Total power dissipation, T
S
G01 80 °C
F)
P
tot
2 W
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point R
thJS
G01 35
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb