BFG196
Jun-27-20011
NPN Silicon RF Transistor
G01 For low noise, low distortion broadband
amplifiers in antenna and telecommunication
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
G01 Power amplifier for DECT and PCN Systems
G01 f
T
= 7.5 GHz
F = 1.5 dB at 900 GHz
VPS05163
1
2
3
4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFG196 BFG196 1 = E 2 = B 3 = E 4 = C
SOT223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
12 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2
Collector current I
C
100 mA
Base current I
B
12
Total power dissipation
T
S
G01 90 °C
1)
P
tot
800 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 75
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance