Semiconductor Group 1 Aug-22-1996
BFG 194
PNP Silicon RF Transistor
• For low distortion broadband amplifiers in
antenna and telecommunications systems up
to 1.5 GHz at collector currents from 20mA
to 80mA
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFG 194 BFG194 Q62702-F1321 1 = E 2 = B 3 = E 4 = C SOT-223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
15 V
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
3
Collector current I
C
100 mA
Base current I
B
10
Total power dissipation
T
S
≤ 75 °C
P
tot
1000
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 75 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.