BF999
器件描述：Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：116.21KB，共5页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1
Silicon N Channel MOSFET Triode BF 999
a71 For high-frequency stages up to 300 MHz,
preferably in FM applications
Maximum Ratings
Type Marking Package
1)
Pin Configuration
BF 999 Q62702-F1132LB SOT-23
1 2 3
G D S
Ordering Code
(tape and reel)
Parameter Symbol Values Unit
Drain-source voltage VDS 20 V
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 450 K/W
Total power dissipation, TA ≤ 60 ˚C Ptot 200 mW
Storage temperature range Tstg – 55 … + 150 ˚C
Gate-source peak current ± IGSM 10
Channel temperature Tch 150
mADrain current ID 30
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
07.94
Silicon N Channel MOSFET Triode BF 999
a71 For high-frequency stages up to 300 MHz,
preferably in FM applications
Maximum Ratings
Type Marking Package
1)
Pin Configuration
BF 999 Q62702-F1132LB SOT-23
1 2 3
G D S
Ordering Code
(tape and reel)
Parameter Symbol Values Unit
Drain-source voltage VDS 20 V
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 450 K/W
Total power dissipation, TA ≤ 60 ˚C Ptot 200 mW
Storage temperature range Tstg – 55 … + 150 ˚C
Gate-source peak current ± IGSM 10
Channel temperature Tch 150
mADrain current ID 30
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
07.94