BF998
器件描述：Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：180.2KB，共8页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 04.96
Silicon N Channel MOSFET Tetrode BF 998
Features
a71 Short-channel transistor
with high S/C quality factor
a71 For low-noise, gain-controlled
input stages up to 1 GHz
Maximum Ratings
Type Marking Package
1)
Pin Configuration
BF 998 Q62702-F1129MO SOT-143
1 2 3 4
S D G2 G1
Ordering Code
(tape and reel)
Parameter Symbol Values Unit
Drain-source voltage VDS 12 V
Thermal Resistance
Junction - soldering point Rth JS < 370 K/W
Total power dissipation, TS < 76 ˚C Ptot 200 mW
Storage temperature range Tstg – 55 … + 150 ˚C
Gate 1/gate 2 peak source current ± IG1/2SM 10
Channel temperature Tch 150
mADrain current ID 30
1)
For detailed information see chapter Package Outlines.
Silicon N Channel MOSFET Tetrode BF 998
Features
a71 Short-channel transistor
with high S/C quality factor
a71 For low-noise, gain-controlled
input stages up to 1 GHz
Maximum Ratings
Type Marking Package
1)
Pin Configuration
BF 998 Q62702-F1129MO SOT-143
1 2 3 4
S D G2 G1
Ordering Code
(tape and reel)
Parameter Symbol Values Unit
Drain-source voltage VDS 12 V
Thermal Resistance
Junction - soldering point Rth JS < 370 K/W
Total power dissipation, TS < 76 ˚C Ptot 200 mW
Storage temperature range Tstg – 55 … + 150 ˚C
Gate 1/gate 2 peak source current ± IG1/2SM 10
Channel temperature Tch 150
mADrain current ID 30
1)
For detailed information see chapter Package Outlines.