BF996S
器件描述:
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器件资料摘要:
BF996S
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99 1 (8)
Document Number 85010
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages in UHF tuners.
Features
C0068 Integrated gate protection diodes
C0068 Low noise figure
C0068 Low feedback capacitance
C0068 High cross modulation performance
C0068 Low input capacitance
C0068 High AGC-range
13 579
21
43
94 9279
BF996S Marking: MH
Plastic case (SOT 143)
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
G
2
G
1
D
S
12623
Absolute Maximum Ratings
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Type Symbol Value Unit
Drain - source voltage V
DS
20 V
Drain current I
D
30 mA
Gate 1/Gate 2 - source peak current ±I
G1/G2SM
10 mA
Total power dissipation T
amb
≤ 60 C0176C P
tot
200 mW
Channel temperature T
Ch
150 C0176C
Storage temperature range T
stg
–65 to +150 C0176C
Maximum Thermal Resistance
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35C0109m Cu
R
thChA
450 K/W