BF987
器件描述：SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：79.36KB，共5页
Sponsor by e络盟器件资料摘要：
Silicon N Channel MOSFET Triode BF 987
l For high-frequency stages up to 300 MHz,
preferably in FM applications
l High overload capability
Maximum Ratings
Type Marking Package
1)
Pin Configuration
BF 987 Q62702-F35– TO-92
1 2 3
D S G
Ordering Code
Parameter Symbol Values Unit
Drain-source voltage VDS 20 V
Thermal Resistance
Junction - ambient Rth JA £ 350 K/W
Total power dissipation, TA £ 45 ˚C Ptot 300 mW
Storage temperature range Tstg – 55 … + 150 ˚C
Gate-source peak current – IGSM 10
Channel temperature Tch 150
mADrain current ID 30
1)
For detailed information see chapter Package Outlines.
l For high-frequency stages up to 300 MHz,
preferably in FM applications
l High overload capability
Maximum Ratings
Type Marking Package
1)
Pin Configuration
BF 987 Q62702-F35– TO-92
1 2 3
D S G
Ordering Code
Parameter Symbol Values Unit
Drain-source voltage VDS 20 V
Thermal Resistance
Junction - ambient Rth JA £ 350 K/W
Total power dissipation, TA £ 45 ˚C Ptot 300 mW
Storage temperature range Tstg – 55 … + 150 ˚C
Gate-source peak current – IGSM 10
Channel temperature Tch 150
mADrain current ID 30
1)
For detailed information see chapter Package Outlines.