BF979
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99 1 (5)
Document Number 85006
Silicon PNP Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
UHF/VHF uncontrolled prestages with low noise and
low modulation.
Features
C0068 High cross modulation performance
C0068 High power gain
C0068 Low noise
C0068 High reverse attenuation
94 9308
1
3
2
BF979 Marking: BF979
Plastic case (TO 50)
1 = Collector, 2 = Base, 3 = Emitter
13623
Absolute Maximum Ratings
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-base voltage –V
CBO
20 V
Collector-emitter voltage –V
CEO
20 V
Emitter-base voltage –V
EBO
3 V
Collector current –I
C
50 mA
Total power dissipation T
amb
≤ 60 C0176C P
tot
300 mW
Junction temperature T
j
150 C0176C
Storage temperature range T
stg
–55 to +150 C0176C
Maximum Thermal Resistance
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35C0109m Cu
R
thJA
300 K/W