BF770A
器件描述:NPN Silicon RF Transistor
文件大小:69.9KB,共3页
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器件资料摘要:
BF 770A
1 Oct-26-1999
NPN Silicon RF Transistor
G01 For IF amplifiers in TV-sat tuners
and for VCR modulators
1
2
3
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BF 770A LSs 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
12 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2
Collector current I
C
50 mA
Base current I
B
6
Total power dissipation, T
S
G01 63 °C
F)
P
tot
300 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
G01 290
K/WJunction - soldering point R
thJS
1
T
S
is measured on the collector lead at the soldering point to the pcb