1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0078C0080C0078 C0083C0105C0108C0105C0099C0111C0110 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage V
CEO
300 Vdc
Collector-Base Voltage V
CBO
300 Vdc
Collector-Emitter Voltage V
CER
300 Vdc
Emitter-Base Voltage V
EBO
5.0 Vdc
Collector Current I
C
100 mAdc
Total Power Dissipation up to T
A
= 25°C P
D
1.5 Watts
Storage Temperature Range T
stg
–65 to +150 °C
Junction Temperature T
J
150 °C
DEVICE MARKING
DC
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance
from Junction-to-Ambient
(1)
R
θJA
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
300 — Vdc
Collector-Base Breakdown Voltage
(I
C
= 100 µAdc, I
E
= 0)
V
(BR)CBO
300 — Vdc
Collector-Emitter Breakdown Voltage
(I
C
= 100 µAdc, R
BE
= 2.7 kΩ)
V
(BR)CER
300 — Vdc
Emitter-Base Breakdown Voltage
(I
E
= 10 µAdc, I
C
= 0)
V
(BR)EBO
5.0 — Vdc
Collector-Base Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
I
CBO
— 10 nAdc
Collector–Emitter Cutoff Current
(V
CE
= 250 Vdc, R
BE
= 2.7 kΩ)
(V
CE
= 200 Vdc, R
BE
= 2.7 kΩ, T
J
= 150°C)
I
CER
—
—
50
10
nAdc
µAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in
2
.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BF720T1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
 Motorola, Inc. 1998
C0066C0070C0055C0050C0048C0084C0049
NPN SILICON
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
SOT–223 (TO-261AA)
1
2
3
4
COLLECTOR 2,4
BASE
1
EMITTER 3
REV 3