BF660W
器件描述：PNP Silicon RF Transistor (For VHF oscillator applications)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：59.42KB，共4页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 Aug-14-1996
BF 660W
PNP Silicon RF Transistor
• For VHF oscillator applications
Type Marking Ordering Code Pin Configuration Package
BF 660W LEs Q62702-F1568 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
30 V
Collector-base voltage V
CBO
40
Emitter-base voltage V
EBO
4
Collector current I
C
25 mA
Base current I
B
5
Total power dissipation
T
S
≤ 93 °C
P
tot
280
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point R
thJS
205 K/W
BF 660W
PNP Silicon RF Transistor
• For VHF oscillator applications
Type Marking Ordering Code Pin Configuration Package
BF 660W LEs Q62702-F1568 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
30 V
Collector-base voltage V
CBO
40
Emitter-base voltage V
EBO
4
Collector current I
C
25 mA
Base current I
B
5
Total power dissipation
T
S
≤ 93 °C
P
tot
280
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point R
thJS
205 K/W