BF660
器件描述：PNP Silicon RF Transistor (For VHF oscillator applications)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：39.04KB，共3页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1
PNP Silicon RF Transistor BF 660
a71 For VHF oscillator applications
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BF 660 Q62702-F982LEs SOT-23
1 2 3
B E C
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 30 V
Collector-base voltage VCB0 40
Emitter-base voltage VEB0 4
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 450 K/W
Total power dissipation, TA ≤ 25 ˚C Ptot 280 mW
Storage temperature range Tstg – 65 … + 150
Emitter current IE 30
Junction temperature Tj 150 ˚C
Collector current IC 25 mA
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
07.94
PNP Silicon RF Transistor BF 660
a71 For VHF oscillator applications
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BF 660 Q62702-F982LEs SOT-23
1 2 3
B E C
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 30 V
Collector-base voltage VCB0 40
Emitter-base voltage VEB0 4
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 450 K/W
Total power dissipation, TA ≤ 25 ˚C Ptot 280 mW
Storage temperature range Tstg – 65 … + 150
Emitter current IE 30
Junction temperature Tj 150 ˚C
Collector current IC 25 mA
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
07.94