C
C
E
B
SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 – MARCH 2001 ✪
FEATURES
* High breakdown and low saturation voltages
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE:- BF721
PARTMARKING DETAILS:- BF720
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
300 V
Collector-Emitter Voltage V
CEO
300 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
100 mA
Continuous Collector Current I
C
50 mA
Power Dissipation at T
amb
=25°C P
tot
2W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300 V I
C
=10µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300 V I
C
=1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5VI
E
=100µA, I
C
=0
Collector Cut-Off Current I
CBO
10 nA V
CB
=200V, I
E
=0
Collector Cut-Off
Current
I
CER
50
10
nA
µA
V
CE
=200V, R
BE
=2.7KΩ
V
CE
=200V, R
BE
=2.7kΩ †
Emitter Cut-Off Current I
EBO
10 µA V
EB
=5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.6 V I
C
=30mA, I
B
=5mA*
Base Emitter
Saturation Voltage
V
BE (sat)
0.9 V I
C
=20mA, I
B
=2mA*
Static Forward Current
Transfer Ratio
h
FE
50 I
C
=25mA, V
CE
=20V*
Transition Frequency f
T
100 MHz I
C
=10mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
0.8 pF V
CB
=30V, f=1MHz
†Tamb =150°C
*Measured under pulsed conditions.
For typical characteristics graphs see FMMTA42 datasheet.
BF720
TBA