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BF623

器件描述:PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:129.44KB,共4页
Sponsor by e络盟
器件资料摘要:
Semiconductor Group 1
PNP Silicon High-Voltage Transistor BF 623
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BF 623 Q62702-F1053DB SOT-89
1 2 3
B C E
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 90 K/W
Junction - soldering point Rth JS ≤ 30
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 250 V
Peak collector current ICM 100
Collector current IC 50 mA
Junction temperature Tj 150 ˚C
Total power dissipation, TS = 120 ˚C Ptot 1W
Storage temperature range Tstg – 65 … + 150
Collector-base voltage VCB0 250
Emitter-base voltage VEB0 5
Collector-emitter voltage, RBE = 2.7 kΩ VCER 250
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
a71 Suitable for video output stages in TV sets
a71 High breakdown voltage
a71 Low collector-emitter saturation voltage
a71 Low capacitance
a71 Complementary type: BF 622 (NPN)
5.91