BF543
Jun-28-20011
Silicon N-Channel MOSFET Triode
G01 For high-frequency stages up to 300 MHz
preferably in FM applications
G01G02I
DSS
= 4mA, g
fs
= 12mS
1
2
3
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BF543 LDs 1 = G 2 = D 3 = S SOT23
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage V
DS
20 V
Drain current I
D
30 mA
Gate-source peak current
G01G02I
GSM
10
Total power dissipation, T
S
G03 76 °C
P
tot
200 mW
Storage temperature T
stg
-55 ... 150 °C
Ambient temperature range T
A
-55 ... 150
Channel temperature T
ch
150
Thermal Resistance
Channel - soldering point
1)
R
thchs
G01370 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance