1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0072C0105C0103C0104 C0086C0111C0108C0116C0097C0103C0101 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–350 Vdc
Collector–Base Voltage V
CBO
–350 Vdc
Emitter–Base Voltage V
EBO
–6.0 Vdc
Collector Current — Continuous I
C
–500 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
Watts
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction to Case R
C0113JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= –1.0 mAdc, I
B
= 0)
V
(BR)CEO
–350 — Vdc
Collector–Base Breakdown Voltage
(I
C
= –100 C0109Adc, I
E
= 0)
V
(BR)CBO
–350 — Vdc
Emitter–Base Breakdown Voltage
(I
E
= –100 C0109Adc, I
C
= 0)
V
(BR)EBO
–6.0 — Vdc
Collector Cutoff Current
(V
CE
= –250 Vdc)
I
CES
— –10 nAdc
Emitter Cutoff Current
(V
EB
= –6.0 Vdc, I
C
= 0)
I
EBO
— 0.1 C0109Adc
Collector Cutoff Current
(V
CB
= –250 Vdc, I
E
= 0, T
A
= 25°C)
(V
CB
= –250 Vdc, I
E
= 0, T
A
= 100°C)
I
CBO
—
—
–0.005
–1.0
C0109Adc
1. Pulse Test: Pulse Width C0118 300 C0109s; Duty Cycle C0118 2.0%.
Order this document
by BF493S/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0070C0052C0057C0051C0083
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER