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器件描述：4M (512K X 8) BIT
器件厂商：FUJITSU [Fujitsu Media Devices Limited]
厂商主页：http://edevice.fujitsu.com/fmd/en/index.html
文件大小：424.68KB
文件页数：40
PDF阅读：BM29F040.pdf (点击阅读器件资料)
摘要：
DS05-20842-4E
FUJITSU SEMICONDUCTOR
DATA SHEET
Embedded Erase?, Embedded Program? and ExpressFlash? are trademarks of Advanced Micro Devices, Inc.
FLASH MEMORY
CMOS
4M (512K · 8) BIT
MBM29F040C-55/-70/-90
n FEATURES
? Single 5.0 V read, program and erase
Minimizes system level power requirements
? Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
? Compatible with JEDEC-standard byte-wide pinouts
32-pin PLCC (Package suffix: PD)
32-pin TSOP(I) (Package suffix: PF)
32-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
? Minimum 100,000 write/erase cycles
? High performance
55 ns maximum access time
? Sector erase architecture
8 equal size sectors of 64K bytes each
Any combination of sectors can be concurrently erased. Also supports full chip erase.
? Embedded Erase? Algorithms
Automatically pre-programs and erases the chip or any sector
? Embedded Program? Algorithms
Automatically writes and verifies data at specified address
?Data Polling and Toggle Bit feature for detection of program or erase cycle completion
?Low VCC write inhibit ? 3.2 V
? Sector protection
Hardware method disables any combination of sectors from write or erase operations
? Erase Suspend/Resume
Suspends the erase operation to allow a read data in another sector within the same device
相关器件：MBM29F040C MBM29F040C-55 MBM29F040C-55PFTN MBM29F040C-55PD MBM29F040C-55PFTR MBM29F040C-70PD MBM29F040C-70 MBM29F040C-70PFTR MBM29F040C-70PFTN MBM29F040C-90PFTN MBM29F040C-90PFTR MBM29F040C-90 MBM29F040C-90PD
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