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BF421

器件描述:PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:124.15KB,共4页
Sponsor by e络盟
器件资料摘要:
Semiconductor Group 1
PNP Silicon Transistors BF 421
With High Reverse Voltage BF 423
5.91
Maximum Ratings
Type Ordering CodeMarking Package
1)
Pin Configuration
BF 421
BF 423
Q62702-F532
Q62702-F496
– TO-92
1 2 3
E C B
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V
Collector current IC mA
Junction temperature Tj ˚C
Total power dissipation, TC = 88 ˚C Ptot mW
Storage temperature range Tstg
Collector-emitter voltage
RBE = 2.7 k
VCER
Thermal Resistance
Junction - ambient Rth JA ≤ 150 K/W
50
830
150
– 65 … + 150
Collector-base voltage VCB0
– 250
300 –
BF 421 BF 423
Peak base current IBM 100
300 250
Emitter-base voltage VEB0 5
Junction - case
2)
Rth JC ≤ 75
a71 High breakdown voltage
a71 Low collector-emitter saturation voltage
a71 Low capacitance
a71 Complementary types: BF 420, BF 422 (NPN)
1
2
3