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BCR30

器件描述:MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
器件厂商:MITSUBISHI [Mitsubishi Electric Semiconductor]
文件大小:88.14KB,共5页
Sponsor by e络盟
器件资料摘要:
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR30AM
APPLICATION
Contactless AC switches, light dimmer,
on/off and speed control of small induction motors, on/off control of copier lamps,
microwave ovens
•IT (RMS) ...................................................................... 30A
•VDRM ..............................................................400V/600V
•IFGT !, IRGT !, IRGT #...........................................50mA
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage
] 1
Non-repetitive peak off-state voltage
] 1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
Symbol
IT (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg

Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=75°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Ratings
30
300
378
5
0.5
10
2
–40 ~ +125
–40 ~ +125
4.8
] 1. Gate open.
TYPE
NAME
VOLTAGE
CLASS
φ
3.2±0.2
19.5 MIN
231
2±0.3
1.0±0.2
5.45
15.9 MAX
5.0
20.0±0.5
2
4
4.5±0.3
1.5±0.2
2.8±0.3
5.45
4
0.6±0.2

4
24
1
3
1CR
2CR
3CR
4
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
T2 TERMINAL
OUTLINE DRAWING
Dimensions
in mm
TO-3P

Measurement point of
case temperature