BF257
器件描述：HIGH VOLTAGE VIDEO AMPLIFIERS
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：83.27KB，共5页
Sponsor by e络盟器件资料摘要：
BF257
BF258-BF259
October 1988
HIGH VOLTAGE VIDEO AMPLIFIERS
DESCRIPTION
The BF257, BF258 and BF259 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case.They are particularly designed for videooutput
stages in CTV and MTV sets, class A audio output
stages and drivers for horizontal deflection circuits.
ABSOLUTE MAXIMUM RATINGS
Value
Symbol Parameter
BF257 BF258 BF259
Unit
V
CBO
Collector-base Voltage (I
E
= 0) 160 250 300 V
V
CEO
Collector-emitter Voltage (I
B
= 0) 160 250 300 V
V
EBO
Emitter-base Voltage (I
C
=0) 5 V
I
C
Collector Current 100 mA
I
CM
Collector Peak Current 200 mA
P
tot
Total Power Dissipation at T
amb
≤ 50 °C5W
T
stg
Storage Temperature – 55 to 200 °C
T
j
Junction Temperature 200 °C
INTERNAL SCHEMATIC DIAGRAM
TO-39
1/5
BF258-BF259
October 1988
HIGH VOLTAGE VIDEO AMPLIFIERS
DESCRIPTION
The BF257, BF258 and BF259 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case.They are particularly designed for videooutput
stages in CTV and MTV sets, class A audio output
stages and drivers for horizontal deflection circuits.
ABSOLUTE MAXIMUM RATINGS
Value
Symbol Parameter
BF257 BF258 BF259
Unit
V
CBO
Collector-base Voltage (I
E
= 0) 160 250 300 V
V
CEO
Collector-emitter Voltage (I
B
= 0) 160 250 300 V
V
EBO
Emitter-base Voltage (I
C
=0) 5 V
I
C
Collector Current 100 mA
I
CM
Collector Peak Current 200 mA
P
tot
Total Power Dissipation at T
amb
≤ 50 °C5W
T
stg
Storage Temperature – 55 to 200 °C
T
j
Junction Temperature 200 °C
INTERNAL SCHEMATIC DIAGRAM
TO-39
1/5